| PART |
Description |
Maker |
| 15GN03CA-TB-E ENA1106A |
RF Transistor 10V, 70mA, fT=1.5GHz, NPN Single CP
|
ON Semiconductor
|
| ENA1108A |
RF Transistor 10V, 70mA, fT=1.5GHz, NPN Single MCP
|
ON Semiconductor
|
| IRG4PH30 IRG4PH30K |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 3.10V，@和VGE \u003d 15V的，集成电路\u003d 10A条）
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
|
| IRG4RC10SD IRG4RC10SDTR IRG4RC10SDTRL IRG4RC10SDTR |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.10V，@和VGE \u003d 15V的，集成电路\u003d 2.0安培
600V DC-1 kHz (Standard) Copack IGBT in a D-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| EN1719 |
Bipolar Transistor, 10V, 3A, Low VCE(sat), NPN Single PCP
|
ON Semiconductor
|
| 2SB1396 2SB1396S |
TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 3A I(C) | SOT-89
DC-DC Converter,Motor Driver Applications
|
Sanyo Semicon Device
|
| SI9410DY |
VDS (V) = 30V ID = 7 A (VGS = 10V) RDS(ON) 0.03 (VGS = 10V)
|
TY Semiconductor Co., L...
|
| FC809 |
30V, 70mA Rectifier Silicon Barrier Diode
|
SANYO
|
| LDV5010 |
41.85MHz; 3.3V; 70mA; DVC read channel device
|
ldic
|
